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Surface Mount Schottky Diode IDCHIP B5819WS 1A 40V SOD323 Package Rectification Applications

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Surface Mount Schottky Diode IDCHIP B5819WS 1A 40V SOD323 Package Rectification Applications

Reverse Leakage Current (Ir) : 1mA@40V

Voltage - DC Reverse (Vr) (Max) : 40V

Diode Configuration : Independent

Voltage - Forward(Vf@If) : 900mV@3A

Current - Rectified : 1A

Description : 40V Independent 900mV@3A 1A SOD-323 Single Diodes RoHS

Mfr. Part # : B5819WS

Model Number : B5819WS

Package : SOD-323

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Product Overview

This document details the B5817WS, B5818WS, and B5819WS series of 1A surface-mount Schottky diodes in a SOD-323 package. These diodes are designed for rectification applications.

Product Attributes

  • Brand: (Indreamchip)
  • Origin: China
  • Package Type: SOD-323

Technical Specifications

ParameterSymbolB5817WSB5818WSB5819WSUnitConditions
Reverse VoltageVR203040VAbsolute Maximum Ratings (Ta = 25 OC)
Reverse Breakdown Voltage at IR = 1 mAVCharacteristics at Ta = 25 OC
203040VCharacteristics at Ta = 25 OC
Average Forward Rectified CurrentIF(AV)1AAbsolute Maximum Ratings (Ta = 25 OC)
Non-Repetitive Peak Forward Surge CurrentIFSM9A(t = 8.3 ms), Absolute Maximum Ratings (Ta = 25 OC)
Power DissipationPtot450mWAbsolute Maximum Ratings (Ta = 25 OC)
Operating Temperature RangeTj-55 to +125OCAbsolute Maximum Ratings (Ta = 25 OC)
-55 to +125OCStorage Temperature Range, Absolute Maximum Ratings (Ta = 25 OC)
Forward VoltageVF0.45Vat IF = 1 A, Characteristics at Ta = 25 OC
0.55Vat IF = 3 A, Characteristics at Ta = 25 OC
0.6Vat IF = 3 A, Characteristics at Ta = 25 OC
Reverse Voltage Leakage CurrentIR1mAat VR = 20 V, Characteristics at Ta = 25 OC
1mAat VR = 30 V, Characteristics at Ta = 25 OC
1mAat VR = 40 V, Characteristics at Ta = 25 OC
Total CapacitanceCtot120pFat VR = 4 V, f = 1 MHz, Characteristics at Ta = 25 OC

2411272123_IDCHIP-B5819WS_C2848201.pdf


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