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MDD Microdiode Semiconductor MMBTA42 NPN Transistor Offering High Breakdown Voltage and Performance

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MDD Microdiode Semiconductor MMBTA42 NPN Transistor Offering High Breakdown Voltage and Performance

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 250nA

Pd - Power Dissipation : 350mW

Transition frequency(fT) : 50MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 300mA

Collector - Emitter Voltage VCEO : 300V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 300V 0.3A 50MHz 350mW Surface Mount SOT-23

Mfr. Part # : MMBTA42

Model Number : MMBTA42

Package : SOT-23

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MMBTA42 - NPN Transistor

The MMBTA42 is an NPN transistor in a SOT-23 package, designed for applications requiring a low collector-emitter saturation voltage and high breakdown voltage. It serves as a complementary part to the MMBTA92 (PNP) transistor. This device is suitable for general-purpose amplification and switching circuits.

Product Attributes

  • Brand: microdiode
  • Package Type: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsMinMaxUnit
Collector-Base Breakdown VoltageV(BR)CBOIC= 100A, IE=0300V
Collector-Emitter Breakdown VoltageV(BR)CEOIC= 1mA, IB=0300V
Emitter-Base Breakdown VoltageV(BR)EBOIE= 100A, IC=05V
Collector Cut-off CurrentICBOCB V =200V, IE=00.25A
Emitter Cut-off CurrentIEBOEB V = 5V, IC=00.1A
DC Current GainhFE(1)CE V =10V, IC= 1mA60
hFE(2)CE V =10V, IC=10mA200
hFE(3)CE V =10V, IC=30mA100
Collector-Emitter Saturation VoltageVCE(sat)IC=20mA, IB= 2mA0.2V
Base-Emitter Saturation VoltageVBE(sat)IC= 20mA, IB=2mA0.9V
Transition FrequencyfTVCE= 20V, IC= 10mA, f=30MHz50MHz
Thermal Resistance, Junction to AmbientRJA357/mW

Maximum Ratings

ParameterSymbolValueUnit
Collector-Base VoltageVCBO300V
Collector-Emitter VoltageVCEO300V
Emitter-Base VoltageVEBO5V
Collector Current ContinuousIC0.3A
Collector Power DissipationPC*350mW
Junction TemperatureTJ150
Storage TemperatureTstg-55-150

Package Information

PackageReel SizeQ'TY/ReelBox SizeQTY/BoxCarton SizeQTY/Carton
SOT-237'3000203203195 mm45000 pcs438438220 mm180000 pcs

2411211939_MDD-Microdiode-Semiconductor-MMBTA42_C2858524.pdf


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