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MDD Microdiode Semiconductor BC847C NPN Transistor SOT23 Package Suitable for Switching Applications

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MDD Microdiode Semiconductor BC847C NPN Transistor SOT23 Package Suitable for Switching Applications

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 100MHz

type : NPN

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 45V

Operating Temperature : -65℃~+150℃

Description : Bipolar (BJT) Transistor NPN 45V 0.1A 100MHz 200mW Surface Mount SOT-23

Mfr. Part # : BC847C

Model Number : BC847C

Package : SOT-23

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Product Overview

The BC846, BC847, and BC848 are NPN bipolar transistors in a SOT-23 package, ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.

Product Attributes

Brand: Microdiode
Package: SOT-23

Technical Specifications

Model	Parameter	Symbol	Test Conditions	Min	Unit	Max	Typ
BC846, BC847, BC848	Collector-Base Voltage	VCBO	IE=0		V
			BC846		80
			BC847		50
			BC848		30
BC846, BC847, BC848	Collector-Emitter Voltage	VCEO	IB=0		V
			BC846		65
			BC847		45
			BC848		30
Emitter-Base Voltage				VEBO	IE=0	6	V
Collector Current Continuous				IC		0.1	A
Collector Power Dissipation				PC*	Ta=25		mW	200
Junction Temperature				TJ				150
Storage Temperature				Tstg		-65		150
BC846, BC847, BC848	Collector-base breakdown voltage	VCBO	I_C=10A, I_E=0		V
		BC846		80
		BC847		50
		BC848		30
BC846, BC847, BC848	Collector-emitter breakdown voltage	VCEO	I_C=10mA, I_B=0		V
		BC846		65
		BC847		45
		BC848		30
Emitter-base breakdown voltage				VEBO	I_E=10A, I_C=0		V	6
BC846, BC847, BC848	Collector cut-off current	ICBO	V_CB=70 V, I_E=0		A	0.1
		BC847	V_CB=50 V, I_E=0		A	0.1
		BC848	V_CB=30 V, I_E=0		A	0.1
Emitter cut-off current				IEBO	V_EB=5 V, I_C=0		A	0.1
BC846A,847A,848A	DC current gain	hFE	V_CE= 5V, I_C= 2mA


BC846A,847A,848A				110
BC846B,847B,848B				200
BC846C,847C,848C				420
Collector-emitter saturation voltage				VCE(sat)	I_C=100mA, I_B= 5mA		V	0.5
Base-emitter saturation voltage				VBE(sat)	I_C=100mA, I_B= 5mA		V	1.1
Transition frequency				fT	V_CE= 5 V, I_C=10mA, f=100MHz		MHz	100
Collector output capacitance				Cob	V_CB=10V,f=1MHz		pF	4.5

2511061031_MDD-Microdiode-Semiconductor-BC847C_C840838.pdf

Cheap MDD Microdiode Semiconductor BC847C NPN Transistor SOT23 Package Suitable for Switching Applications for sale

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