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Compact electronic PNP transistor Guangdong Hottech MMBT3906 designed for surface mount applications

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Compact electronic PNP transistor Guangdong Hottech MMBT3906 designed for surface mount applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 300MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Description : Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 200mW Surface Mount SOT-23

Mfr. Part # : MMBT3906

Model Number : MMBT3906

Package : SOT-23

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Product Overview

The MMBT3906 is a PNP bipolar transistor designed for surface mount applications. It serves as a complementary device to the MMBT3904 and is housed in a SOT-23 package, making it suitable for compact electronic designs.

Product Attributes

Brand: Hekketai (SHENZHEN HOTTECH ELECTRONICS CO.,LTD)
Origin: Shenzhen, China
Case Material: Molded Plastic
UL Flammability Classification: 94V-0

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	-40	V
Collector-Emitter Voltage	VCEO	-40	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current	IC	-200	mA
Collector Power Dissipation	PC	200	mW
Thermal Resistance Junction To Ambient	RJA	625	C/W
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	-40	V	IC=-10uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	-40	V	IC=-1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	-5	V	IE=-10uAIC=0
Collector cut-off current	ICBO	-0.1	uA	VCB=-40V, IE=0
Collector cut-off current	ICEX	-50	nA	VCE=-30V, VBE(OFF)=-3V
Emitter cut-off current	IEBO	-0.1	uA	VEB=-5V, IC=0
DC current gain (hFE1)	hFE1	100-300		VCE=-1V, IC=-10mA
DC current gain (hFE2)	hFE2	60		VCE=-1V, IC=-50mA
DC current gain (hFE3)	hFE3	30		VCE=-2V, IC=-100mA
Collector-emitter saturation voltage	VCE(sat)	-0.3	V	IC=-50mAIB=-5mA
Base-emitter saturation voltage	VBE(sat)	-0.95	V	IC=-50mAIB=-5mA
Transition frequency	fT	300	MHz	VCE=-20V,IC=-10mA,f=100MHz
Delay time	td	35	ns	VCC=-3V, VBE(OFF)=-0.5V, IC=-10mAIB1==IB2=-1mA
Rise time	tr	35	ns	VCC=-3V,IC=-10mA IB1=IB2=-1mA
Storage time	tS	225	ns	VCC=-3V,IC=-10mA IB1=IB2=-1mA
Fall time	tf	75	ns	VCC=-3V,IC=-10mA IB1=IB2=-1mA
hFE Classification Rank L		100-200
hFE Classification Rank H		200-300
Marking		2A

2410122030_Guangdong-Hottech-MMBT3906_C181120.pdf

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