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Rectifier Diodes with Surge Current Capability Featuring JSCJ US3D SMBG Plastic Encapsulation

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Rectifier Diodes with Surge Current Capability Featuring JSCJ US3D SMBG Plastic Encapsulation

Non-Repetitive Peak Forward Surge Current : 100A

Reverse Leakage Current (Ir) : 10uA@200V

Reverse Recovery Time (trr) : 50ns

Operating Junction Temperature Range : -55℃~+150℃

Voltage - DC Reverse (Vr) (Max) : 200V

Voltage - Forward(Vf@If) : 1.3V@3A

Current - Rectified : 3A

Description : 100A 50ns 200V 1.3V@3A 3A SMBG Single Diodes RoHS

Mfr. Part # : US3D

Model Number : US3D

Package : SMBG

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US3A THRU US3M SMBG Plastic-Encapsulate Diodes

High Efficient Rectifier Diodes with high surge current capability. These diodes are designed for rectifier applications and feature a color band denoting the cathode.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: US3X X : From A To M
  • Polarity: Color band denotes cathode
  • Package: SMBG

Technical Specifications

ItemSymbolUnitTest ConditionsUS3AUS3BUS3DUS3GUS3JUS3KUS3M
Maximum RMS VoltageVRVRMS50752004006008001000
Repetitive Peak Reverse VoltageVRRMV50752004006008001000
Average Forward CurrentIF(AV)A60Hz Half-sine wave Resistance loadTL=753.0
Surge(Non-repetitive)Forward CurrentIFSMA60Hz Half-sine wave 1 cycleTA=2570
Operation Junction and Storage Temperature RangeTJ,TSTG -55 ~ +150
Limiting Values(Absolute Maximum Rating)
Peak Forward VoltageVFVIF =3.0A1.01.31.71.71.71.71.7
Peak Reverse CurrentIRRM1AVRM=VRRM, TA =2550
Peak Reverse CurrentIRRM2AVRM=VRRM, TA =10010
Maximum reverse recovery timetrrnsIF=0.5A,IR=1.0A,Irr =0.25A47
Thermal Resistance(Typical)RJ-A/ WBetween junction and ambient75
Thermal Resistance(Typical)RJ-L/ WBetween junction and terminal2.95

2410121845_JSCJ-US3D_C3031938.pdf


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