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Low Forward Voltage Drop Rectifier JSCJ SBDB30100CT Suitable for Applications Requiring Rectification

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Low Forward Voltage Drop Rectifier JSCJ SBDB30100CT Suitable for Applications Requiring Rectification

Reverse Leakage Current (Ir) : 100uA@100V

Non-Repetitive Peak Forward Surge Current : 200A

Voltage - DC Reverse (Vr) (Max) : 100V

Voltage - Forward(Vf@If) : 850mV@15A

Current - Rectified : 30A

Description : Diode 100V 30000mA Surface Mount TO-263-2L

Mfr. Part # : SBDB30100CT

Model Number : SBDB30100CT

Package : TO-263-2L

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Product Overview

This Schottky Barrier Rectifier offers low power loss and high efficiency with high current capability and low forward voltage drop. It features a Guard Ring Die Construction for transient protection. Ideal for applications requiring efficient rectification.

Product Attributes

Brand: JSCJ
Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Material: Plastic-Encapsulate Diode
Color: Green molding compound device (if solid dot present), otherwise normal device.
Device Code: SBDB30100CT

Technical Specifications

Parameter	Symbol	Test conditions	Value	Unit
Peak repetitive reverse voltage	VRRM		100	V
Working peak reverse voltage	VRWM			V
DC blocking voltage	VR		100	V
RMS reverse voltage	VR(RMS)		70	V
Average rectified output current	IO		30	A
Non-Repetitive peak forward surge current (8.3ms half sine wave)	IFSM		200	A
Junction temperature	Tj		150
Storage temperature	Tstg		-55~+150
Reverse voltage	V(BR)	IR=0.1mA	100	V
Reverse current	IR	VR=100V, Tj=25	5.0	mA
Reverse current	IR	VR=100V, Tj=125	1.0	mA
Forward voltage	VF	IF=30A, Tj=25	0.82	V
Forward voltage	VF	IF=30A, Tj=125	0.77	V
Forward voltage	VF	IF=15A, Tj=25	0.70	V
Forward voltage	VF	IF=15A, Tj=125	0.64	V
Forward voltage (typ)	VF(typ)	@Tj=125	0.70	V
Thermal resistance from junction to ambient	RJA		62.5	/W
Thermal resistance from junction to case	RJC	Tc=25	2.0	/W
Total Capacitance	CTOT	f = 1 MHz, Ta = 25	150	pF

2410121815_JSCJ-SBDB30100CT_C5295519.pdf

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