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PNP Silicon Switching Transistor Slkor MMBT589 for Portable Electronics Load Management Applications

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PNP Silicon Switching Transistor Slkor MMBT589 for Portable Electronics Load Management Applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Transition frequency(fT) : 100MHz

type : PNP

Pd - Power Dissipation : 310mW

Current - Collector(Ic) : 1A

Collector - Emitter Voltage VCEO : 30V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 30V 1A 100MHz 0.31W Surface Mount SOT-23

Mfr. Part # : MMBT589

Model Number : MMBT589

Package : SOT-23

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Product Overview

The MMBT589 is a high-current surface mount PNP silicon switching transistor designed for load management in portable applications. It features an epitaxial planar die construction and is available in a lead-free version. This transistor is suitable for various load management tasks in portable electronic devices.

Product Attributes

  • Construction: Epitaxial planar die
  • Package Type: SOT-23
  • Availability: Lead-free version available

Technical Specifications

Symbol Parameter Test Conditions Min. Max. Unit
Maximum Ratings @ Ta=25
VCBO Collector-base voltage -50 V
VCEO Collector-emitter voltage -30 V
VEBO Emitter-base voltage -5 V
IC Collector current (DC) -1.0 A
ICM Collector Current-Peak -2.0 A
PC Collector dissipation 0.31 W
RJA Thermal Resistance, Junction to Ambient 403 C/W
Tj ,Tstg Junction and storage temperature -55 +150 C
Electrical Characteristics @ Ta=25
V(BR)CBO Collector-base breakdown voltage IC=-100A,IE=0 -50 V
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA,IB=0 -30 V
V(BR)EBO Emitter-base breakdown voltage IE=-100A,IC=0 -5 V
ICBO Collector cut-off current IE = 0; VCB = -30V -0.1 A
ICES Collector-emitter cutoff current VCES=-30V -0.1 A
IEBO Emitter cut-off current IC = 0; VEB = -4V -0.1 A
hFE DC current gain VCE = -2V; IC= -1mA 100 300
VCE = -2V;IC = -500mA 100
VCE = -2V;IC = -1.0A 80
VCE = -2V;IC = -2.0A 40
VCE(sat) Collector-emitter saturation voltage IC = -0.5A; IB = -0.05A -0.25 V
IC = -1.0A; IB = -0.1A -0.30 V
IC = -2.0A; IB = -0.2A -0.65 V
VBE(sat) Base-emitter saturation voltage IC = -1.0A; IB = -0.1A -1.2 V
VBE(on) Base-emitter Turn-on voltage IC=-1.0A,VCE=-2.0V -1.1 V
fT Transition frequency IC = -100mA; VCE = -5V; f = 100MHz 100 MHz
Cobo Output capacitance f=1.0MHz 15 pF
Package Information
Device Package Shipping
MMBT589 SOT-23 3000 pcs / Tape & Reel
Package Outline & Soldering Footprint (SOT-23)
Dim Min Max
A 2.70 3.10 mm
B 1.10 1.50 mm
C 0.90 1.10 mm
D 0.30 0.50 mm
E 0.35 0.48 mm
G 1.80 2.00 mm
H 0.02 0.10 mm
J 0.05 0.15 mm
K 2.20 2.60 mm

2401121840_Slkor-MMBT589_C20539666.pdf


Cheap PNP Silicon Switching Transistor Slkor MMBT589 for Portable Electronics Load Management Applications for sale

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