Sign In | Join Free | My insurersguide.com
China Hefei Purple Horn E-Commerce Co., Ltd. logo
Hefei Purple Horn E-Commerce Co., Ltd.
Hefei Purple Horn E-Commerce Co., Ltd.
Verified Supplier

1 Years

Home > Single Bipolar Transistors >

Plastic Encapsulated Transistor Slkor PXT8050 SOT89 Package Designed for Switching and Amplification

Hefei Purple Horn E-Commerce Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

Plastic Encapsulated Transistor Slkor PXT8050 SOT89 Package Designed for Switching and Amplification

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Transition frequency(fT) : 100MHz

Vce Saturation(VCE(sat)) : 500mV

type : NPN

Pd - Power Dissipation : 500mW

Current - Collector(Ic) : 1.5A

Collector - Emitter Voltage VCEO : 25V

Description : Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 500mW Surface Mount SOT-89

Mfr. Part # : PXT8050

Model Number : PXT8050

Package : SOT-89

Contact Now

Product Overview

The PXT8050 is a plastic-encapsulated transistor designed for general-purpose amplification and switching applications. It is complementary to the PXT8550. This device is available in a SOT-89 package.

Product Attributes

  • Package Type: SOT-89
  • Lead Options: Lead Free, Halogen Free ('G')

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
Collector-Base Voltage VCBO @ Ta=25 unless otherwise specified 40 V
Collector-Emitter Voltage VCEO @ Ta=25 unless otherwise specified 25 V
Emitter-Base Voltage VEBO @ Ta=25 unless otherwise specified 6 V
Collector Current -Continuous IC @ Ta=25 unless otherwise specified 1.5 A
Base Current-Continuous IB @ Ta=25 unless otherwise specified 500 mA
Collector Power dissipation PC @ Ta=25 unless otherwise specified 0.5 W
Junction Temperature Tj @ Ta=25 unless otherwise specified 150
Storage Temperature Tstg @ Ta=25 unless otherwise specified -55 +150
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA ,IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 uA
Emitter cut-off current ICEO VCE=20V,IE=0 0.1 uA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 uA
DC current gain hFE VCE=1V, IC=100mA 85 400
DC current gain hFE VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA ,IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V
Base-emitter voltage VBE VCE=1V,IC=10mA 1 V
Base-emitter positive favor voltage VBEF IB=1A 1.55 V
Transition frequency fT VCE=10V,IC=50mA, f=30MHz 100 MHz
Output Capacitance Cob VCB=10V, f=1MHz ,IE=0 15 pF

hFE Classification

Rank Range
B 85-160
C 120-200
D 160-300
D3 300-400

Package Outline & Dimensions (SOT-89)

Dim Min Max
A 4.30 4.70
B 2.25 2.65
C 1.30 1.70
D 0.30 0.50
E 1.40 1.60
F 0.38 0.58
H 1.60 1.80
J 0.30 0.50
L 0.90 1.10
K 3.95 4.35

All Dimensions in mm

Package Information

Device Package Shipping
PXT8050 SOT-89 1000/Tape&Reel

2303300930_Slkor-PXT8050_C5375308.pdf


Cheap Plastic Encapsulated Transistor Slkor PXT8050 SOT89 Package Designed for Switching and Amplification for sale

Plastic Encapsulated Transistor Slkor PXT8050 SOT89 Package Designed for Switching and Amplification Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)