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Durable PNP Transistor for Electronic Circuits GOODWORK B772 Featuring Collector Power Dissipation

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Durable PNP Transistor for Electronic Circuits GOODWORK B772 Featuring Collector Power Dissipation

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 10uA

Pd - Power Dissipation : 500mW

Transition frequency(fT) : 50MHz

type : PNP

Current - Collector(Ic) : 3A

Collector - Emitter Voltage VCEO : 30V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 30V 3A 50MHz 0.5W Surface Mount SOT-89

Mfr. Part # : B772

Model Number : B772

Package : SOT-89

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Product Overview

The B772 is a PNP transistor designed for low-speed switching applications. It offers reliable performance with key electrical characteristics and maximum ratings suitable for various electronic circuits.

Product Attributes

Brand: B772
Package Type: SOT-89
Transistor Type: PNP

Technical Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-30	V
VEBO	Emitter-Base Voltage	-6	V
IC	Collector Current - Continuous	-3	A
PC	Collector Power Dissipation	0.5	W
RJA	Thermal Resistance, Junction to Ambient	250	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃
V(BR)CBO	Collector-base breakdown voltage (IC=-100A ,IE=0)	-40	V
V(BR)CEO	Collector-emitter breakdown voltage (IC= -10mA , IB=0)	-30	V
V(BR)EBO	Emitter-base breakdown voltage (IE= -100A,IC=0)	-6	V
ICBO	Collector cut-off current (VCB= -40V, IE=0)	-1	μA
ICEO	Collector cut-off current (VCE=-30V, IB=0)	-10	μA
IEBO	Emitter cut-off current (VEB=-6V, IC=0)	-1	μA
hFE	DC current gain (VCE= -2V, IC= -1A)	60 - 400
VCE(sat)	Collector-emitter saturation voltage (IC=-2A, IB= -0.2A)	-0.5	V
VBE(sat)	Base-emitter saturation voltage (IC=-2A, IB= -0.2A)	-1.5	V
fT	Transition frequency (VCE= -5V, IC=-0.1A f =10MHz)	50	MHz

2409181159_GOODWORK-B772_C22470937.pdf

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