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GOODWORK MMBT8050D 1.5A transistor designed for operation in general purpose electronic applications

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GOODWORK MMBT8050D 1.5A transistor designed for operation in general purpose electronic applications

Description : SOT-23 Single Bipolar Transistors RoHS

Mfr. Part # : MMBT8050D(1.5A)

Model Number : MMBT8050D(1.5A)

Package : SOT-23

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MMBT8050D NPN Transistor

The MMBT8050D is an NPN transistor designed for general-purpose applications. Its robust construction and reliable performance make it suitable for various electronic circuits.

Product Attributes

Marking Type: MMBT8050D
Marking Code: Y1

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current - Continuous	IC				1.5	A
Collector Power Dissipation	PC				300	mW
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		150
Collector Cut-off Current	ICBO	VCB = 40V, IE = 0			0.1	uA
Emitter Cut-off Current	IEBO	VEB = 5V, IC = 0			0.1	uA
DC Current Gain	hFE1	VCE = 1V, IC = 100mA	120		400
DC Current Gain	hFE2	IC = 800mA, IB = 80mA		400
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 800mA, IB = 80mA		0.5	1.2	V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 800mA, IB = 80mA		1.0		V
Transition Frequency	fT	VCE = 10V, IC = 50mA		40		MHz
Collector Cut-off Current	ICEO	VCE = 20V, IE = 0			0.1	uA
Collector-Base Breakdown Voltage	V(BR)CBO	IC = 100uA, IE = 0	40			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 0.1 mA, IB = 0	25			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE = 100uA, IC = 0	5			V
Thermal Resistance From Junction To Ambient	RthJA			417		/W

2512301500_GOODWORK-MMBT8050D-1-5A_C53260779.pdf

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